annealed condition造句

• Orthogonal test method of annealing conditions for relaxor ferroelectric ceramics
  弛豫铁电陶瓷最佳退火条件的正交试验法
• Influence of annealing conditions on stress impedance effect of fecunbsib amorphous alloy strip
  非晶带材应力阻抗效应的影响
• The best annealing condition of the zno films grown by electron beam evaporation technique was achieved
  采用电子束蒸发的方法在si衬底上生长zno薄膜，通过退火实验，得到了最佳的退火条件。
• With sem , x - ray diffraction analysis , magnetic measurement by magnetic property measurement system , the effects of growth and annealing conditions are analyzed
  超导薄膜，采用磁测量m - t x射线衍射扫描电子显微镜技术分析了各种沉积及退火条件对mgb
• The difficulty can be overcomed that the n atom is not easy to be doped into zno . if we control the annealing condition , the residual nitrogen atoms will become acceptors in zno : n films
  通过这种方法可以克服n原子不容易惨杂进氧化锌的困难，并且可以通过控制退火过程来控制n原子< wp = 5 >的掺杂浓度。
• The main work includes three contents as followings : 1 , the situation of ohmic contact about al electrode , ti / al electrode on n - gan in different annealing conditions are investigated
  主要工作如下： 1 、研究了al单层及ti al双层电极与n型gan在不同退火条件下的欧姆接触情况，并用挖补圆盘法计算出接触电阻率。
• The effect of annealing condition such as temperature , time and vacuum on microstructure of vo2 films was studies . the crystalline vo2 films can be obtained after annealing at 450 3 hour in 10pa vacuum . the conductivity of films increases linearly with increasing the temperature
  对退火温度和时间以及真空度的影响进行了研究，在低真空( 10pa ) 450退火3小时后得到的vo _ 2薄膜，晶体颗粒呈长方柱状，具有良好的结晶性能。
• In this paper , we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time . studied the different annealing condition dependence of the samples " structure , electrical and magnetic properties and the relation of the mn + forms and these properties
  本课题采用离子注入的方法将不同剂量的mn ~ +注入到非掺杂半绝缘( 100 ) gaas单晶衬底中，然后进行不同温度和时间的快速热退火处理，研究了不同的退火条件对样品注入层的晶体结构、电特性和磁特性的影响以及mn ~ +在样品中的存在状态与这些性质之间的关系。
• The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions . by using xrd sims analytic methods and i - v measuremnet , we analysed the interface between metals and gan , and suggested that it is effect to decrease the value of the ohmic contact
  主要工作如下： 1 、研究了al单层及ti al双层电极与n型si基gan和al _ 2o _ 3基gan在不同退火条件下的欧姆接触情况，并用x射线衍射谱( xrd ) ，二次离子质谱( sims )对界面固相反应进行了分析。
• The test results show that the grain sizes do not reduce further after 6 passes of ecap , the slip systems of ferrite is mainly belonging to { 110 } < 111 > and { 112 } < 111 > slip system family during the first and the second pass of the ecap with route c , and under the annealing conditions of 300 ~ 550 x lh , ultrafme grains are thermally stable
  研究发现，在c方式ecap变形中，各道次ecap变形细化程度不同， 1道次细化效果最大，随后道次细化作用逐步减少，变形6道次为实验用钢的ecap晶粒细化的极限。铁素体c方式ecap变形第1和第2道次的主要滑移系为{ 110 } < 111 >和{ 112 } < 111 > 。
• Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
  在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。